Title :
A CAD-Oriented Analytical MOSFET Model for High-Accuracy Applications
Author :
Turchetti, Claudio ; Masetti, Guido
Author_Institution :
Department of Electronics, University of Ancona, Ancona, Italy
fDate :
4/1/1984 12:00:00 AM
Abstract :
Explicit and accurate formulations for the surface potential against quasi-Fermi potential of the minority carriers in a long-channel MOS transistor are found. Moreover, it is shown that, for a variety of process parameters, these simple formulations, together with a suitable rearrangement of the Brews´ model, can be fruitfully adopted for an accurate modeling of the MOST characteristics in all the operating regimes (weak inversion, moderate inversion, strong inversion).
Keywords :
Analog integrated circuits; Analytical models; Application specific integrated circuits; Equations; Integrated circuit modeling; MOSFET circuits; Marine vehicles; Predictive models; Region 5; Voltage;
Journal_Title :
Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on
DOI :
10.1109/TCAD.1984.1270064
