A CAD-Oriented Analytical MOSFET Model for High-Accuracy Applications

Explicit and accurate formulations for the surface potential against quasi-Fermi potential of the minority carriers in a long-channel MOS transistor are found. Moreover, it is shown that, for a variety of process parameters, these simple formulations, together with a suitable rearrangement of the Brews´ model, can be fruitfully adopted for an accurate modeling of the MOST characteristics in all the operating regimes (weak inversion, moderate inversion, strong inversion).