DocumentCode
912583
Title
Gallium arsenide on sapphire Gunn effect devices
Author
Owens, J.M.
Volume
58
Issue
6
fYear
1970
fDate
6/1/1970 12:00:00 AM
Firstpage
930
Lastpage
931
Abstract
The epitaxial growth of single-crystal GaAs on an insulating sapphire substrate, recently reported, has been used in the fabrication of Gunn effect devices.
Keywords
Character generation; Diodes; Fabrication; Frequency; Gallium arsenide; Gunn devices; Injection-locked oscillators; Power generation; Signal generators; Silicon;
fLanguage
English
Journal_Title
Proceedings of the IEEE
Publisher
ieee
ISSN
0018-9219
Type
jour
DOI
10.1109/PROC.1970.7811
Filename
1449741
Link To Document