DocumentCode
912608
Title
F.m. noise measurements on silicon IMPATT oscillators
Author
Clunie, D.M. ; Tearle, C.A. ; Court, W.P.N.
Author_Institution
Services Electronics Research Laboratory, Baldock, UK
Volume
7
Issue
2
fYear
1971
Firstpage
39
Lastpage
40
Abstract
The view has often been expressed that IMPATT oscillators have poor f.m. noise performance. This letter gives results of f.m. noise measurements on J band IMPATT oscillators which indicate that, with suitable cavity and diode design, good f.m. noise performance can be obtained.
Keywords
IMPATT devices; frequency modulation; microwave oscillators; noise measurement; FM noise measurement; IMPATT oscillators; J-band; Si; microwave oscillators;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19710029
Filename
4235134
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