• DocumentCode
    912660
  • Title

    The Size Effect of Ion Charge Tracks on Single Event Multiple-Bit Upset

  • Author

    Martin, R.C. ; Ghoniem, N.M. ; Song, Y. ; Cable, J.S.

  • Author_Institution
    Mechanical, Aerospace and Nuclear Engineering Department University of California, Los Angeles, CA 90024
  • Volume
    34
  • Issue
    6
  • fYear
    1987
  • Firstpage
    1305
  • Lastpage
    1309
  • Abstract
    Double-bit upset rates in satellite memory cells as high as several percent of total upsets have recently been reported. This significant fraction may be explained by cosmic ion track sizes which are larger than previously postulated. Generation and transport of high-energy secondary electrons along heavy-ion tracks have been analyzed using the Monte Carlo (MC) code TRIPOS-E. Indications are that initial track radii are significantly larger than previously thought. In this paper, an evaluation of the probability of double-bit upsets as a function of track size and hypothetical device dimensions is presented.
  • Keywords
    Algorithms; Computational modeling; Electrons; Energy exchange; Energy loss; Equations; Ionization; Kinetic energy; Particle scattering; Solids;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.1987.4337470
  • Filename
    4337470