DocumentCode
912660
Title
The Size Effect of Ion Charge Tracks on Single Event Multiple-Bit Upset
Author
Martin, R.C. ; Ghoniem, N.M. ; Song, Y. ; Cable, J.S.
Author_Institution
Mechanical, Aerospace and Nuclear Engineering Department University of California, Los Angeles, CA 90024
Volume
34
Issue
6
fYear
1987
Firstpage
1305
Lastpage
1309
Abstract
Double-bit upset rates in satellite memory cells as high as several percent of total upsets have recently been reported. This significant fraction may be explained by cosmic ion track sizes which are larger than previously postulated. Generation and transport of high-energy secondary electrons along heavy-ion tracks have been analyzed using the Monte Carlo (MC) code TRIPOS-E. Indications are that initial track radii are significantly larger than previously thought. In this paper, an evaluation of the probability of double-bit upsets as a function of track size and hypothetical device dimensions is presented.
Keywords
Algorithms; Computational modeling; Electrons; Energy exchange; Energy loss; Equations; Ionization; Kinetic energy; Particle scattering; Solids;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/TNS.1987.4337470
Filename
4337470
Link To Document