DocumentCode :
912660
Title :
The Size Effect of Ion Charge Tracks on Single Event Multiple-Bit Upset
Author :
Martin, R.C. ; Ghoniem, N.M. ; Song, Y. ; Cable, J.S.
Author_Institution :
Mechanical, Aerospace and Nuclear Engineering Department University of California, Los Angeles, CA 90024
Volume :
34
Issue :
6
fYear :
1987
Firstpage :
1305
Lastpage :
1309
Abstract :
Double-bit upset rates in satellite memory cells as high as several percent of total upsets have recently been reported. This significant fraction may be explained by cosmic ion track sizes which are larger than previously postulated. Generation and transport of high-energy secondary electrons along heavy-ion tracks have been analyzed using the Monte Carlo (MC) code TRIPOS-E. Indications are that initial track radii are significantly larger than previously thought. In this paper, an evaluation of the probability of double-bit upsets as a function of track size and hypothetical device dimensions is presented.
Keywords :
Algorithms; Computational modeling; Electrons; Energy exchange; Energy loss; Equations; Ionization; Kinetic energy; Particle scattering; Solids;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/TNS.1987.4337470
Filename :
4337470
Link To Document :
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