P-channel MOSFET´s with ultrathin N/sub 2/O gate oxides

Author

Lo, G.Q. ; Ting, W. ; Ahn, J. ; Kwong, Dim-Lee

Author_Institution

Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX, USA

Volume

13

Issue

2

fYear

1992

Firstpage

111

Lastpage

113

Abstract

The performance and reliability of p-channel MOSFETs utilizing ultrathin ( approximately 62 AA) gate dielectrics grown in pure N/sub 2/O ambient are reported. Unlike (reoxidized) NH/sub 3/-nitrided oxide devices, p-MOSFETs with N/sub 2/O-grown oxides show improved performance in both linear and saturation regions compared to control devices with gate oxides grown in O/sub 2/. Because both electron and hole trapping are suppressed in N/sub 2/O-grown oxides, the resulting p-MOSFETs show considerably enhanced immunity to channel hot-electron and -hole-induced degradation (e.g., hot-electron-induced punchthrough).<>

Keywords

dielectric thin films; electron traps; hole traps; hot carriers; insulated gate field effect transistors; reliability; Si-SiNO; electron trapping; hole trapping; hot carrier immunity; p-channel MOSFETs; pure N/sub 2/O ambient; reliability; trapping suppression; ultrathin N/sub 2/O gate oxides; Annealing; CMOS technology; Charge carrier processes; Degradation; Electron traps; Furnaces; Hot carriers; MOSFET circuits; Temperature; Thickness measurement;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.144975

Filename

144975