DocumentCode :
912748
Title :
Room-temperature close-confinement GaAs laser with overall external quantum efficiency of 40 percent
Author :
Gill, Robert B.
Author_Institution :
RCA Electronic Components, Somerville, N. J.
Volume :
58
Issue :
6
fYear :
1970
fDate :
6/1/1970 12:00:00 AM
Firstpage :
949
Lastpage :
949
Abstract :
The most efficient room-temperature GaAs injection lasers have been made by use of the close-confinement (heterostructure) technique. Differential external quantum efficiency in excess of 50 percent was observed on lasers having threshold current densities as low as 8500 A/cm2.
Keywords :
Coaxial components; Epitaxial layers; Gallium arsenide; Optical devices; Optical films; Optical losses; Shape; Signal resolution; Signal to noise ratio; Substrates;
fLanguage :
English
Journal_Title :
Proceedings of the IEEE
Publisher :
ieee
ISSN :
0018-9219
Type :
jour
DOI :
10.1109/PROC.1970.7826
Filename :
1449756
Link To Document :
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