A Comparison of Positive Charge Generation in High Field Stressing and Ionizing Radiation on MOS Structures

We compare the effects of ionizing radiation and high field stressing on Metal-Oxide-Silicon oxides. Using electron spin resonance, we compare the point defects responsible for the positive charge generated by ionizing radiation and high field stressing. We find the two processes to be different in that the positive charge generated by ionizing radiation is almost entirely due to E¿ centers in the oxide; however, less than half the positive charge generated by high field stressing can be accounted for by E¿ centers.