• DocumentCode
    912782
  • Title

    Temperature-Induced Rebound in Power MOSFETs

  • Author

    Singh, Gurbax ; Galloway, Kenneth F. ; Russell, Thomas J.

  • Author_Institution
    Semiconductor Electronics Division National Bureau of Standards Gaithersburg, MD 20899 and Department of Natural Sciences University of Maryland Eastern Shore Princess Anne, MD 21853
  • Volume
    34
  • Issue
    6
  • fYear
    1987
  • Firstpage
    1366
  • Lastpage
    1369
  • Abstract
    Enhancement-mode n-channel power MOSFETs were investigated for rebound. They received 300 krad(Si) gamma dose under positive gate bias with source and drain grounded. The irradiated transistors were thermally annealed with all terminals shorted or under positive gate bias with drain and source shorted, at temperatures from 60°C to 150°C. Threshold voltage rebound was observed for some transistor types under certain experimental conditions.
  • Keywords
    Annealing; Current measurement; Ionizing radiation; MOSFETs; Manufacturing; Power measurement; Power supplies; Temperature; Testing; Threshold voltage;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.1987.4337481
  • Filename
    4337481
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=912782