Abstract :
A review of recent and current work on microwave FET´s and amplifiers is presented, and an extensive bibliography of recent articles is appended (250 references). First, the various FET structures (MRSFET´s, JFET´s, and IGFET´s) and their performances are reviewed. Second, the principle of operation is outlined for Si- and GaAs-MESFET´s; the basic device physics, equivalent circuit, high-frequency limitations, and noise behavior are treated. Third, the design principles and performance of microwave MESFET amplifiers are summarized.
