DocumentCode
912898
Title
Quantification of the Memory Imprint Effect for a Charged Particle Environment
Author
Bhuva, B.L. ; Johnson, R.L., Jr. ; Gyurcsik, R.S. ; Fernald, K.W. ; Kerns, S.E. ; Stapor, W.J. ; Campbell, A.B. ; Xapsos, M.A.
Author_Institution
North Carolina State University Electrical and Computer Engineering Department Raleigh, North Carolina 27695 7911
Volume
34
Issue
6
fYear
1987
Firstpage
1414
Lastpage
1418
Abstract
The effects of total accumulated dose on the single-event vulnerability of NMOS resistive-load SRAM´s are investigated. The bias-dependent shifts in device parameters can imprint the memory state present during exposure or erase the imprinted state. Analysis of these effects is presented along with an analytic model developed for the quantification of these effects. The results indicate that the imprint effect is dominated by the difference in the threshold voltage of the n-channel devices.
Keywords
CMOS logic circuits; Circuit testing; Ionizing radiation; Laboratories; Logic testing; MOS devices; Protons; Pulse measurements; Random access memory; Threshold voltage;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/TNS.1987.4337490
Filename
4337490
Link To Document