DocumentCode
912899
Title
Theoretical study off silicon-clad planar diffused optical waveguides
Author
Koshiba, M. ; Kumagami, H.
Author_Institution
Hokkaido University, Department of Electronic Engineering, Sapporo, Japan
Volume
134
Issue
6
fYear
1987
fDate
12/1/1987 12:00:00 AM
Firstpage
333
Lastpage
338
Abstract
A silicon-clad planar diffused optical waveguide structure is proposed and propagation characteristics for a wavelength of 0.6328 ¿¿m are investigated. The refractive index profile of the substrate is assumed to be a Gaussian profile and a maximum index change of 0.01 is also assumed. Computer modelling studies indicate that silicon-clad diffused optical waveguides exhibit a damped periodic oscillation in the attenuation and mode index curves. The attenuations of these waveguide structures are relatively small compared with those of the four-layer planar homogeneous waveguide structures reported by Batchman and McWright. The attenuation may be reduced with a low-index buffer layer. Furthermore, the attenuation and mode index are significantly altered by the conductivity changes of silicon.
Keywords
elemental semiconductors; guided light propagation; optical waveguides; refractive index; silicon; 0.6328 micron; Gaussian profile; Si clad planar diffused optical waveguides; attenuation curves; conductivity; damped periodic oscillation; four-layer planar homogeneous waveguide structures; low-index buffer layer; maximum index change; mode index curves; propagation characteristics; refractive index profile; semiconductors;
fLanguage
English
Journal_Title
Optoelectronics, IEE Proceedings J
Publisher
iet
ISSN
0267-3932
Type
jour
DOI
10.1049/ip-j.1987.0054
Filename
4644432
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