• DocumentCode
    912899
  • Title

    Theoretical study off silicon-clad planar diffused optical waveguides

  • Author

    Koshiba, M. ; Kumagami, H.

  • Author_Institution
    Hokkaido University, Department of Electronic Engineering, Sapporo, Japan
  • Volume
    134
  • Issue
    6
  • fYear
    1987
  • fDate
    12/1/1987 12:00:00 AM
  • Firstpage
    333
  • Lastpage
    338
  • Abstract
    A silicon-clad planar diffused optical waveguide structure is proposed and propagation characteristics for a wavelength of 0.6328 ¿¿m are investigated. The refractive index profile of the substrate is assumed to be a Gaussian profile and a maximum index change of 0.01 is also assumed. Computer modelling studies indicate that silicon-clad diffused optical waveguides exhibit a damped periodic oscillation in the attenuation and mode index curves. The attenuations of these waveguide structures are relatively small compared with those of the four-layer planar homogeneous waveguide structures reported by Batchman and McWright. The attenuation may be reduced with a low-index buffer layer. Furthermore, the attenuation and mode index are significantly altered by the conductivity changes of silicon.
  • Keywords
    elemental semiconductors; guided light propagation; optical waveguides; refractive index; silicon; 0.6328 micron; Gaussian profile; Si clad planar diffused optical waveguides; attenuation curves; conductivity; damped periodic oscillation; four-layer planar homogeneous waveguide structures; low-index buffer layer; maximum index change; mode index curves; propagation characteristics; refractive index profile; semiconductors;
  • fLanguage
    English
  • Journal_Title
    Optoelectronics, IEE Proceedings J
  • Publisher
    iet
  • ISSN
    0267-3932
  • Type

    jour

  • DOI
    10.1049/ip-j.1987.0054
  • Filename
    4644432