Furnace nitridation of thermal SiO/sub 2/ in pure N/sub 2/O ambient for ULSI MOS applications

Author

Ahn, J. ; Ting, W. ; Kwong, Dim-Lee

Author_Institution

Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX, USA

Volume

13

Issue

2

fYear

1992

Firstpage

117

Lastpage

119

Abstract

Furnace nitridation of thermal SiO/sub 2/ in pure N/sub 2/O ambient for MOS gate dielectric application is presented. N/sub 2/O-nitrided thermal SiO/sub 2/ shows much tighter distribution in time-dependent dielectric breakdown (TDDB) characteristics than thermal oxide. MOSFETs with gate dielectric prepared by this method show improved initial performance and enhanced device reliability compared to those with thermal gate oxide. These improvements are attributed to the incorporation of a small amount of nitrogen ( approximately 1.5 at.%) at the Si-SiO/sub 2/ interface without introducing H-related species during N/sub 2/O nitridation.<>

Keywords

CMOS integrated circuits; MOS integrated circuits; VLSI; dielectric thin films; electric breakdown of solids; integrated circuit technology; nitridation; silicon compounds; MOS gate dielectric application; MOSFETs; Si-SiO/sub 2/ interface; SiNo; ULSI MOS applications; device reliability; furnace nitridation; pure N/sub 2/O ambient; thermal SiO/sub 2/; time-dependent dielectric breakdown; twin well CMOS; Dielectric breakdown; Electrons; Furnaces; Interface states; Nitrogen; Oxidation; Rapid thermal processing; Temperature control; Thickness control; Ultra large scale integration;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.144977

Filename

144977