• DocumentCode
    912918
  • Title

    Broad-Band Medium-Power Amplification in the 2-12.4-GHz Range with GaAs MESFET´s

  • Author

    Hornbuckle, Derry P. ; Kuhlman, Louis J., Jr.

  • Volume
    24
  • Issue
    6
  • fYear
    1976
  • fDate
    6/1/1976 12:00:00 AM
  • Firstpage
    338
  • Lastpage
    342
  • Abstract
    The design of 100-mW GaAs MESFET amplifiers for the 2-6.2-GHz and 5.9-12.4-GHz bands is described. Both small-signal and large-signal matching considerations are presented to obtain a minimum 10-dB gain using a 1-mu m GaAs MESFET. Three combination techniques, direct paralleling, resistive combiners, and hybrid quadrature couplers are discussed. Finally, considerations for absolute stability are presented.
  • Keywords
    Bandwidth; Circuits; Gallium arsenide; High power amplifiers; Impedance matching; Low-noise amplifiers; MESFETs; Microwave measurements; Power amplifiers; Semiconductor device measurement;
  • fLanguage
    English
  • Journal_Title
    Microwave Theory and Techniques, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9480
  • Type

    jour

  • DOI
    10.1109/TMTT.1976.1128852
  • Filename
    1128852
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=912918