Title :
Wide-Band Gallium Arsenide Power MESFET Amplifiers
Author :
Neidert, Robert E. ; Willing, Harry A.
fDate :
6/1/1976 12:00:00 AM
Abstract :
The performance, with emphasis on wide bandwidth, that can be expected of linear medium power GaAs microwave MESFET (metal semiconductor field-effect-transistor) amplifiers is discussed. It starts with measured scattering parameters of devices and proceeds through computer-optimized device modeling, to amplifier circuit designs and performance results. It shows computed and measured octave bandwidth performance and reveals that decade bandwidth is feasible. It discusses single-ended and balanced amplifier design approaches. Some practical designs with performance results are presented, with circuit topologies which are easily realizable in microstrip.
Keywords :
Bandwidth; Broadband amplifiers; Circuit synthesis; Gallium arsenide; MESFETs; Microwave amplifiers; Microwave devices; Power amplifiers; Scattering parameters; Semiconductor optical amplifiers;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
DOI :
10.1109/TMTT.1976.1128853