Title :
Effect of oxide-layer thickness on the speed of m.n.o.s. transistors
Author_Institution :
Plessey Co., Allen Clark Research Centre, Towcester, UK
Abstract :
The electrical characteristics of m.n.o.s. transistors are described. Conditions are proposed for the measurement of the speed, or rate of change of threshold voltage, so that different types may be compared Results are presented to show that the speed increases exponentially as the thickness of the oxide layer is reduced in the range 10¿25 Å.
Keywords :
metal-insulator-semiconductor devices; metal-insulator-semiconductor structures; transistors; MNOS; oxide layer thickness; transistor threshold voltage;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19710061
