• DocumentCode
    912929
  • Title

    Three-Dimensional Monte Carlo Simulations--Part II: Recoil Phenomena

  • Author

    Mazzone, Anna M.

  • Author_Institution
    CNR-Institute LAMEL, Bologna, Italy
  • Volume
    4
  • Issue
    1
  • fYear
    1985
  • fDate
    1/1/1985 12:00:00 AM
  • Firstpage
    110
  • Lastpage
    117
  • Abstract
    A Monte Carlo method has been applied to recoil calculation. The spatial distribution of disorder has been analyzed in connection with parameters like ion mass, energy, and dose. Also implants in multilayer targets and the characteristic features of oxygen recoiling from a SiO 2 coating into Si underneath have been analyzed.
  • Keywords
    Annealing; Coatings; Furnaces; Implants; Ion implantation; Lattices; Monte Carlo methods; Nonhomogeneous media; Semiconductor devices; Semiconductor impurities;
  • fLanguage
    English
  • Journal_Title
    Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0278-0070
  • Type

    jour

  • DOI
    10.1109/TCAD.1985.1270103
  • Filename
    1270103
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=912929