Title :
Three-Dimensional Monte Carlo Simulations--Part II: Recoil Phenomena
Author :
Mazzone, Anna M.
Author_Institution :
CNR-Institute LAMEL, Bologna, Italy
fDate :
1/1/1985 12:00:00 AM
Abstract :
A Monte Carlo method has been applied to recoil calculation. The spatial distribution of disorder has been analyzed in connection with parameters like ion mass, energy, and dose. Also implants in multilayer targets and the characteristic features of oxygen recoiling from a SiO 2 coating into Si underneath have been analyzed.
Keywords :
Annealing; Coatings; Furnaces; Implants; Ion implantation; Lattices; Monte Carlo methods; Nonhomogeneous media; Semiconductor devices; Semiconductor impurities;
Journal_Title :
Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on
DOI :
10.1109/TCAD.1985.1270103
