DocumentCode
912934
Title
Performance of GaAs MESFET Mixers at X Band
Author
Pucel, Robert A. ; Masse, Daniel ; Bera, Richard
Volume
24
Issue
6
fYear
1976
fDate
6/1/1976 12:00:00 AM
Firstpage
351
Lastpage
360
Abstract
A theoretical analysis and experimental verification of the signal properties of the GaAs MESFET mixer are presented. Experimental techniques for evaluating some of the mixer parameters are described. Experiments performed on GaAs MESFET mixers at X band show that good noise performance and large dynamic range can be achieved with conversion gain. A conversion gain over 6 dB is measured at 7.8 GHz. Noise figures as low as 7.4 dB and output third-order intermodulation intercepts of +18 dBm have heen obtained at 8 GHz with a balanced MESFET mixer.
Keywords
Dynamic range; Gallium arsenide; Low-noise amplifiers; MESFETs; Microwave FETs; Mixers; Performance gain; Schottky barriers; Schottky diodes; Transconductance;
fLanguage
English
Journal_Title
Microwave Theory and Techniques, IEEE Transactions on
Publisher
ieee
ISSN
0018-9480
Type
jour
DOI
10.1109/TMTT.1976.1128854
Filename
1128854
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