• DocumentCode
    912952
  • Title

    Edge Rate Induced Upset in High Speed Circuits

  • Author

    Bartholet, William G. ; Stubbs, Gene W. ; Ness, Joseph D.

  • Author_Institution
    Boeing Physical Sciences Research Center Boeing Aerospace Co. P.O. Box 3999 Seattle, WA 98124
  • Volume
    34
  • Issue
    6
  • fYear
    1987
  • Firstpage
    1438
  • Lastpage
    1441
  • Abstract
    A new transient radiation upset mechanism is reported in high speed (GaAs) microcircuits induced by a radiation pulse´s edge rate, or ¿ content. A proposed circuit mechanism is described and supportive test data presented. Hardness assurance implications, hardening issues, and potential scope of the new upset mechanism are all discussed.
  • Keywords
    Bandwidth; Circuit testing; Gallium arsenide; Inductance; Logic devices; Logic testing; Photoconductivity; Pulse circuits; Steady-state; Voltage;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.1987.4337494
  • Filename
    4337494
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=912952