DocumentCode
912963
Title
Submicrometer Self-Aligued GaAs MESFET (Short Papers)
Author
Baudet, P. ; Binet, M. ; Boccon-Gibod, D.
Volume
24
Issue
6
fYear
1976
fDate
6/1/1976 12:00:00 AM
Firstpage
372
Lastpage
376
Abstract
This short paper presents a self-aligned technique which permits the production of submicrometer gate lengths and spacings between contacts. The exclusive use of standard photolithographic techniques makes this method interesting. Microwave measurements are reported for such a device with a 0.7-mu m gate length in a 2.2-mu m drain-source spacing. The yield of the process is usually better than 80 percent.
Keywords
Etching; Gallium arsenide; MESFETs; Notice of Violation; Phase change materials; Phase modulation; Phase shift keying; Production; Schottky diodes; Voltage;
fLanguage
English
Journal_Title
Microwave Theory and Techniques, IEEE Transactions on
Publisher
ieee
ISSN
0018-9480
Type
jour
DOI
10.1109/TMTT.1976.1128857
Filename
1128857
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