DocumentCode
912982
Title
Characterization of an Ultra-Hard CMOS 64K Static RAM
Author
Jenkins, William C. ; Martin, Richard L. ; Hughes, Harold L.
Author_Institution
Naval Research Laboratory Washington, D. C. 20375
Volume
34
Issue
6
fYear
1987
Firstpage
1455
Lastpage
1459
Abstract
We have irradiated radiation-hard 64K CMOS Static RAMs in a 60Co pool at dose rates of 3 and 70 Rads-(SiO2)/sec to simulate a space radiation environment. The devices failed due to write-failure at a total gamma dose in some cases greater than 50 MRads(SiO2). Test Transistors were also irradiated and measured.
Keywords
Bonding; Failure analysis; Laboratories; Performance evaluation; Random access memory; Read-write memory; Semiconductor device measurement; Testing; Time measurement; Voltage;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/TNS.1987.4337497
Filename
4337497
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