• DocumentCode
    912985
  • Title

    Feedback Effects in the GaAs MESFET Model (Letters)

  • Author

    Vendelin, G.D.

  • Volume
    24
  • Issue
    6
  • fYear
    1976
  • fDate
    6/1/1976 12:00:00 AM
  • Firstpage
    383
  • Lastpage
    385
  • Abstract
    GaAs MESFET models correctly predict a positive feedback conductance. The effect of common-lead inductance on Y12 rising computer modeling techniques is examined. Experimental data are also included which indicate that the common-lead inductance of about 0.06 nH cannot be omitted from the model in order to accurately predict the feedback conductance.
  • Keywords
    Capacitance; Feedback; Frequency; Gallium arsenide; Indium tin oxide; Inductance; MESFETs; Microwave devices; Predictive models; Schottky diodes;
  • fLanguage
    English
  • Journal_Title
    Microwave Theory and Techniques, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9480
  • Type

    jour

  • DOI
    10.1109/TMTT.1976.1128860
  • Filename
    1128860
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=912985