DocumentCode :
912995
Title :
The GaAs MESFET as a Pulse Regenerator in the Gigabit per Second Range (Letters)
Author :
Beneking, H. ; Filensky, W.
Volume :
24
Issue :
6
fYear :
1976
fDate :
6/1/1976 12:00:00 AM
Firstpage :
385
Lastpage :
386
Abstract :
Regeneration and amplification of fast pulses in the 50-IPS range have been established using GaAs MESFET´s under switching conditions. Sharpening factors, tr in / tr out,of 3 and voltage amplification factors of 2 at 50 Omega have been achieved for output pulses up to 100 mA. The sharpening effect is caused mainly by the voltage-dependent gate capacitance which varies with the input pulse amplitude.
Keywords :
FETs; Feedback; Frequency; Gallium arsenide; Inductance; MESFETs; Microwave devices; Pulse amplifiers; Stability; Voltage;
fLanguage :
English
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9480
Type :
jour
DOI :
10.1109/TMTT.1976.1128861
Filename :
1128861
Link To Document :
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