Title :
The GaAs MESFET as a Pulse Regenerator in the Gigabit per Second Range (Letters)
Author :
Beneking, H. ; Filensky, W.
fDate :
6/1/1976 12:00:00 AM
Abstract :
Regeneration and amplification of fast pulses in the 50-IPS range have been established using GaAs MESFET´s under switching conditions. Sharpening factors, tr in / tr out,of 3 and voltage amplification factors of 2 at 50 Omega have been achieved for output pulses up to 100 mA. The sharpening effect is caused mainly by the voltage-dependent gate capacitance which varies with the input pulse amplitude.
Keywords :
FETs; Feedback; Frequency; Gallium arsenide; Inductance; MESFETs; Microwave devices; Pulse amplifiers; Stability; Voltage;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
DOI :
10.1109/TMTT.1976.1128861