Computation of large signal GaAs impatt diode parameters from closed form analytical solution

The paper discusses the computation of the large signal admittance and power in Read and abrupt junction structures based on the approximate closed form solution and considering the basic device structure parameters. The results have been compared with the simulation results on the more realistic Read model and found satisfactory throughout a fairly large RF voltage range. The applicability of the analysis for optimum device design is as good as the simulation, with the advantages of lower cost and greater simplicity in terms of the computer program involved.