Title :
Carrier multiplication in the pinchoff region of m.o.s. transistors
Author :
Martinot, H. ; Rossel, P.
Author_Institution :
CRNS, Laboratoire d´Automatique et de ses Applications Spatiales, Toulouse, France
Abstract :
The letter describes a theoretical model for the abnormal current in the substrate of m.o.s. transistors beyond pinchoff. It is shown that this current is due to carrier multiplying by avalanching in the pinchoff region. The corresponding drain conductance is determined. The comparison between experimental and theoretical results is given for several samples.
Keywords :
field effect transistors; metal-insulator-semiconductor devices; semiconductor device models; MOS transistors; carrier multiplication; pinch off region; semiconductor device modelling;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19710078
