• DocumentCode
    913133
  • Title

    Double-drift-region (p+pnn+) avalanche diode oscillators

  • Author

    Scharfetter, D.L. ; Evans, W.J. ; Johnston, Roy L.

  • Volume
    58
  • Issue
    7
  • fYear
    1970
  • fDate
    7/1/1970 12:00:00 AM
  • Firstpage
    1131
  • Lastpage
    1133
  • Abstract
    The advantages of a double-drift-region avalanche diode oscillator are discussed. Conventional structures (p+nn+or n+pp+) are essentially single-drift-region devices in that transit-time delay (for IMPATT mode) and zone transit (for TRAPATT mode) occur in a single region of one impurity type. The proposed structure (p+pnn+) has two drift regions and is essentially two complementary avalanche diode oscillators in series.
  • Keywords
    Amplitude modulation; Circuits; Degradation; Delay effects; Diodes; Filtering; Oscillators; RF signals; Radiofrequency amplifiers; Transient analysis;
  • fLanguage
    English
  • Journal_Title
    Proceedings of the IEEE
  • Publisher
    ieee
  • ISSN
    0018-9219
  • Type

    jour

  • DOI
    10.1109/PROC.1970.7858
  • Filename
    1449788
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=913133