Title :
Double-drift-region (p+pnn+) avalanche diode oscillators
Author :
Scharfetter, D.L. ; Evans, W.J. ; Johnston, Roy L.
fDate :
7/1/1970 12:00:00 AM
Abstract :
The advantages of a double-drift-region avalanche diode oscillator are discussed. Conventional structures (p+nn+or n+pp+) are essentially single-drift-region devices in that transit-time delay (for IMPATT mode) and zone transit (for TRAPATT mode) occur in a single region of one impurity type. The proposed structure (p+pnn+) has two drift regions and is essentially two complementary avalanche diode oscillators in series.
Keywords :
Amplitude modulation; Circuits; Degradation; Delay effects; Diodes; Filtering; Oscillators; RF signals; Radiofrequency amplifiers; Transient analysis;
Journal_Title :
Proceedings of the IEEE
DOI :
10.1109/PROC.1970.7858
