DocumentCode :
913145
Title :
Offset-voltage temperature-coefficient in dual m.o.s.f.e.t. source followers
Author :
Barker, R.W.J. ; Hart, B.L.
Author_Institution :
Portsmouth Polytechnic, Department of Electrical & Electronic Engineering, Portsmouth, UK
Volume :
7
Issue :
5
fYear :
1971
Firstpage :
123
Lastpage :
125
Abstract :
A technique is given for predicting the approximate temperature coefficient of offset voltage of a differential m.o.s.f.e.t. source-follower arrangement incorporated in a unity-gain buffer amplifier set up for zero offset at room temperature. The prediction is dependent on only one measurement, using a bridge-circuit technique, and takes account of possible power-law differences in the nominally matched dual m.o.s.f.e.t.s.
Keywords :
bridge instruments; emitter followers; field effect transistors; metal-insulator-semiconductor devices; thermal effects; bridge circuit technique; dual MOSFET source followers; emitter followers; offset voltage temperature coefficient predicting; thermal effects; unity gain buffer amplifiers;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19710081
Filename :
4235189
Link To Document :
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