DocumentCode
913150
Title
Measurement of Low-Energy X-Ray Dose Enhancement in MOS Devices with Metal Silicide Gates
Author
Benedetto, J.M. ; Boesch, H.E., Jr. ; Oldham, T.R. ; Brown, G.A.
Author_Institution
U. S. Army Laboratory Command Harry Diamond Laboratories Adelphi, MD 20783-1197
Volume
34
Issue
6
fYear
1987
Firstpage
1540
Lastpage
1543
Abstract
A photocurrent technique was used to accurately measure dose enhancement in the gate oxide of MOS devices with tungsten or titanium silicide over various thicknesses of poly-Si exposed to low-energy x-irradiation. The results show that the dose enhancement is strongly dependent on the type of metal/silicide used and the thickness of the poly-Si layer between the metal/silicide and the SiO2 gate insulator. A straightforward procedure for calculating the equal damage dose equivalence for metal/silicide over poly-Si gate MOS structures is also presented.
Keywords
Electrons; Instruments; Ionizing radiation; Laboratories; MOS devices; Metal-insulator structures; Photoconductivity; Process design; Silicides; Thickness measurement;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/TNS.1987.4337512
Filename
4337512
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