• DocumentCode
    913156
  • Title

    Temperature dependence of the MOS mobility degradation

  • Author

    Jones, B.K. ; Russell, P.C.

  • Author_Institution
    University of Lancaster, Department of Physics, Lancaster, UK
  • Volume
    135
  • Issue
    4
  • fYear
    1988
  • fDate
    8/1/1988 12:00:00 AM
  • Firstpage
    94
  • Lastpage
    96
  • Abstract
    The mobility of carriers in an MOS inversion layer appears to decrease as the degree of inversion increases. An investigation using Kelvin contact specimens has separated the extrinsic effect caused by the parasitic contact resistances to the channel and the intrinsic, surface scattering effect. The temperature dependence of the intrinsic effect is reported. The intrinsic effect appears to be process-dependent.
  • Keywords
    carrier mobility; metal-insulator-semiconductor devices; Kelvin contact specimens; MOS inversion layer; MOS mobility degradation; extrinsic effect; field effect devices; intrinsic effect; parasitic contact resistances; surface scattering effect; temperature dependence;
  • fLanguage
    English
  • Journal_Title
    Solid-State and Electron Devices, IEE Proceedings I
  • Publisher
    iet
  • ISSN
    0143-7100
  • Type

    jour

  • DOI
    10.1049/ip-i-1.1988.0017
  • Filename
    4644459
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=913156