Title :
High-power millimeter wave IMPATT oscillators with both hole and electron drift spaces made by ion implantation
Author :
Seidel, Thomas E. ; Scharfetter, D.L.
fDate :
7/1/1970 12:00:00 AM
Abstract :
CW powers of 640 mW at 50 GHz have been obtained from double-drift region IMPATT diodes. This result represents the highest product of CW power times frequency squared obtained to date from any IMPATT diode. The diodes are p+pnn+structures and have both hole and electron drift spaces. The systematic fabrication (by ion implantation) and the evaluation of the dc and millimeter wave characteristics are presented.
Keywords :
Annealing; Boron; Breakdown voltage; Capacitance; Charge carrier processes; Diodes; Fabrication; Ion implantation; Millimeter wave technology; Oscillators;
Journal_Title :
Proceedings of the IEEE
DOI :
10.1109/PROC.1970.7861
