DocumentCode :
913201
Title :
Hot electron device monitoring and characterisation: a review
Author :
Sanchez, J.J. ; Hsueh, K. ; DeMassa, T.A.
Author_Institution :
Intel Corporation, CTMG Division, Chandler, USA
Volume :
135
Issue :
5
fYear :
1988
fDate :
10/1/1988 12:00:00 AM
Firstpage :
113
Lastpage :
118
Abstract :
Several measurement tools required for the accurate assessment of the damage inflicted by the various forms of hot electron phenomena are reviewed. Characterisation of both the type and level of hot electron activity is essential in determining both the rate of degradation as well as forecasting device lifetimes. These measurement tools are frequently employed to evaluate the hot electron resistant properties of new processes and device structures. They also aid the extraction of form factors for different reliability models. These models provide a simple and efficient method to estimate device lifetimes as well as monitor a given fabrication process. In addition, the various measurement techniques can be correlated with each other, allowing the derivation of several empirical models which aid in ascertaining both the type and level of hot electron activity. Once the various correlations have been established, choosing a given monitor allows evaluation of a variety of hot electron activities which is useful in a fabrication environment.
Keywords :
hot carriers; life testing; monitoring; reliability; reviews; semiconductor device models; characterisation; device lifetime estimation; fabrication process monitor; hot electron device monitoring; hot electron phenomena; hot electron resistant properties; measurement techniques; reliability models; review;
fLanguage :
English
Journal_Title :
Solid-State and Electron Devices, IEE Proceedings I
Publisher :
iet
ISSN :
0143-7100
Type :
jour
DOI :
10.1049/ip-i-1.1988.0020
Filename :
4644463
Link To Document :
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