Title :
Etched Schottky-barrier m.o.s.f.e.t.s using a single mask
Author :
Hogeboom, J.G. ; Cobbold, Richard S. C.
Author_Institution :
University of Toronto, Department of Electrical Engineering, Toronto, Canada
Abstract :
A simplified method for fabricating silicon m.o.s. transistors using a single photographic mask is described. The source and drain regions are etched; underetching the oxide results in autoregistration of the gate. The characteristics of both Schottky-barrier and p¿n junction source and drain devices are presented.
Keywords :
etching; field effect transistors; masks; metal-insulator-semiconductor devices; semiconductor device manufacture; MOSFET fabrication; Schottky barrier; etching; semiconductor device fabrication; single masks;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19710086
