DocumentCode
913251
Title
Gamma Radiation Response of MWIR and LWIR HgCdTe Photodiodes
Author
Williams, G.M. ; Vanderwyck, A.H.B. ; Blazejewski, E.R. ; Ginn, R.P. ; Li, C.C. ; Nelson, S. J Nelson
Author_Institution
Rockwell International Science Center
Volume
34
Issue
6
fYear
1987
Firstpage
1592
Lastpage
1596
Abstract
This paper describes the results of experimental investigation of the gamma radiation response of HgCdTe photodiodes. The devices were fabricated in material grown by liquid phase epitaxy; the p-n junctions were made by ion implantation and passivated with ZnS. The MWIR devices, tested at 120K, showed transient response in reasonable agreement with existing theory and total dose hardness greater than 1 Mrad(Si). The LWIR detectors, tested at 40K, showed a degradation threshold at 10 Krad(H2O). This degradation is not a result of surface inversion resulting from charge trapping in the insulator.
Keywords
Degradation; Detectors; Epitaxial growth; Gamma rays; Ion implantation; P-n junctions; Photodiodes; Testing; Transient response; Zinc compounds;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/TNS.1987.4337521
Filename
4337521
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