Title :
Stabilised high power MOSFET modules
Author :
Lazarus, M.J. ; Rabah, K.V.O. ; Ripley, P.M.
Author_Institution :
University of Lancaster, Department of Physics, Lancaster, UK
fDate :
12/1/1988 12:00:00 AM
Abstract :
A new technique is presented that restores the feature of nearly constant current (high output slope resistance) of intensively self heated power MOSFETs. Two versions are provided: one for the conventional MOSFETs; the second for the new current sensing MOSFETs.
Keywords :
insulated gate field effect transistors; power transistors; current sensing; high output slope resistance; high power MOSFET modules; intensively self heated power MOSFETs; nearly constant current;
Journal_Title :
Solid-State and Electron Devices, IEE Proceedings I
DOI :
10.1049/ip-i-1.1988.0027
