DocumentCode
913268
Title
Stabilised high power MOSFET modules
Author
Lazarus, M.J. ; Rabah, K.V.O. ; Ripley, P.M.
Author_Institution
University of Lancaster, Department of Physics, Lancaster, UK
Volume
135
Issue
6
fYear
1988
fDate
12/1/1988 12:00:00 AM
Firstpage
155
Lastpage
158
Abstract
A new technique is presented that restores the feature of nearly constant current (high output slope resistance) of intensively self heated power MOSFETs. Two versions are provided: one for the conventional MOSFETs; the second for the new current sensing MOSFETs.
Keywords
insulated gate field effect transistors; power transistors; current sensing; high output slope resistance; high power MOSFET modules; intensively self heated power MOSFETs; nearly constant current;
fLanguage
English
Journal_Title
Solid-State and Electron Devices, IEE Proceedings I
Publisher
iet
ISSN
0143-7100
Type
jour
DOI
10.1049/ip-i-1.1988.0027
Filename
4644471
Link To Document