• DocumentCode
    913271
  • Title

    Experimental study of surface channel in insulated-gate field-effect transistor

  • Author

    Bandali, M.B. ; Wright, G.T.

  • Author_Institution
    University of Birmingham, Department of Electronic & Electrical Engineering, Birmingham, UK
  • Volume
    7
  • Issue
    5
  • fYear
    1971
  • Firstpage
    142
  • Lastpage
    144
  • Abstract
    A simple experimental technique is described for measuring the effective channel length and the surface-channel drift mobility in the insulated-gate field-effect transistor. Experimental results are presented for p channel transistors made in 8 ¿ cm silicon.
  • Keywords
    electron mobility; field effect transistors; effective channel length measurement; insulated gate field effect transistor; surface channel drift mobility measurement;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19710092
  • Filename
    4235200