DocumentCode
913271
Title
Experimental study of surface channel in insulated-gate field-effect transistor
Author
Bandali, M.B. ; Wright, G.T.
Author_Institution
University of Birmingham, Department of Electronic & Electrical Engineering, Birmingham, UK
Volume
7
Issue
5
fYear
1971
Firstpage
142
Lastpage
144
Abstract
A simple experimental technique is described for measuring the effective channel length and the surface-channel drift mobility in the insulated-gate field-effect transistor. Experimental results are presented for p channel transistors made in 8 ¿ cm silicon.
Keywords
electron mobility; field effect transistors; effective channel length measurement; insulated gate field effect transistor; surface channel drift mobility measurement;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19710092
Filename
4235200
Link To Document