Effect of HCl/O2 and O2 dry environments on the distribution of boron in oxide and silicon from thermally deposited boron

Step anodisation and ion microprobe techniques have been used to study the effect of HCl/O2 and O2 dry environments on the distribution of boron in oxide and silicon from thermally deposited boron. Profiles from the two methods have been compared in silicon, and it is observed that, near the Si/SiO2 interface, the two profiles do not match. In fact, the SIMS results do not show much dip at the Si/SiO2 interface to account for segregation. As well as giving an enhanced oxidation rate, the HCl/O2 ambient introduces more boron into SiO2 than the O2 dry environment, without greatly lowering interface concentration.