Ohmic contacts on diamond by B ion implantation and Ti-Au metallization

Author

Venkatesan, V. ; Das, K.

Author_Institution

Kobe Steel USA Inc., Research Triangle Park, NC, USA

Volume

13

Issue

2

fYear

1992

Firstpage

126

Lastpage

128

Abstract

Low-resistance ohmic contacts have been fabricated on a natural IIb semiconducting diamond crystal and on undoped polycrystalline diamond films by B ion implantation and subsequent metallization with a Ti-Au bilayer metallization. A high B concentration of approximately 7*10/sup 20/ cm/sup -3/ at the surface was obtained by ion implantation, a post-implant anneal, and a subsequent chemical removal of the graphite layer that resulted from the radiation damage. A bilayer metallization of Ti followed by Au annealed at 850 degrees C yielded a specific contact resistance value on the order of 10/sup -6/ Omega -cm/sup 2/ for chemical-vapor-deposition-grown polycrystalline films and on the order of 10/sup -5/ Omega -cm/sup 2/ for the semiconducting natural crystal.<>

Keywords

annealing; boron; contact resistance; diamond; elemental semiconductors; gold; ion implantation; metallisation; ohmic contacts; semiconductor thin films; semiconductor-metal boundaries; titanium; B ion implantation; C:B; CVD grown films; Ti-Au bilayer metallization; crystal; natural IIb semiconducting diamond; ohmic contacts; post-implant anneal; specific contact resistance; undoped polycrystalline diamond films; Annealing; Chemicals; Contact resistance; Gold; Ion implantation; Metallization; Ohmic contacts; Semiconductivity; Semiconductor films; Surface resistance;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.144980

Filename

144980