DocumentCode
913283
Title
Measurement of threshold voltage and channel length of submicron MOSFETs
Author
Jain, S.
Author_Institution
AT&T, Bell Laboratories, Allentown, USA
Volume
135
Issue
6
fYear
1988
fDate
12/1/1988 12:00:00 AM
Firstpage
162
Lastpage
164
Abstract
A simple method for characterisation of MOSFETs with appreciable source and drain series resistance is presented. The ratio g/g1/2m of conductance g and transconductance gm is shown to be a linear function of gate bias, whose intercept equals the threshold voltage and whose slope is proportional to the square root of the channel length. The method is illustrated using measurements on 0.4 ¿m to 1.0 ¿m channel length LDD transistors.
Keywords
insulated gate field effect transistors; 0.4 to 1.0 micron; LDD transistors; channel length; characterisation; conductance; drain series resistance; gate bias; linear function; source resistance; square root; submicron MOSFETs; threshold voltage; transconductance;
fLanguage
English
Journal_Title
Solid-State and Electron Devices, IEE Proceedings I
Publisher
iet
ISSN
0143-7100
Type
jour
DOI
10.1049/ip-i-1.1988.0029
Filename
4644473
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