Calculation of Channeling Effects During Ion Implantation Using the Boltzmann Transport Equation

The Boltzmann transport equation approach for ion implantation simulation has been enhanced to allow the calculation of channeling effects. Simple models are used for scattering into channeling directions and for motion along channels in order to obtain useful results without requiring excessive amounts of computation time. Comparison with experimental profiles show good agreement for boron implantation into <100> and <111> silicon based on experimental values for electronic stopping powers. Where stopping data is not available, parameters can be adjusted to fit the experimental profiles.