DocumentCode
913336
Title
Two-watt CW GaAs Schottky-barrier IMPATT diodes
Author
Kim, Choong Ki
Volume
58
Issue
7
fYear
1970
fDate
7/1/1970 12:00:00 AM
Firstpage
1153
Lastpage
1154
Abstract
New high power (CW) at X-band from GaAs Schottky-barrier diodes was achieved as a result of improved heat sink and Schottky-barrier contact formation techniques. An output power of 2.1 watts (CW) at 9.2 GHz with an efficiency of 9 percent was obtained from a diode mounted on a diamond heat sink with the Schottky-barrier contact adjacent to it. The measured thermal resistance was about 7°C/W. The diodes were fabricated using platinum and molybdenum on n-type epitaxial GaAs substrate.
Keywords
Copper; Electrical resistance measurement; Electromagnetic heating; Gallium arsenide; Heat sinks; Power generation; Pulse measurements; Schottky diodes; Semiconductor diodes; Voltage;
fLanguage
English
Journal_Title
Proceedings of the IEEE
Publisher
ieee
ISSN
0018-9219
Type
jour
DOI
10.1109/PROC.1970.7874
Filename
1449804
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