Title :
Two-watt CW GaAs Schottky-barrier IMPATT diodes
fDate :
7/1/1970 12:00:00 AM
Abstract :
New high power (CW) at X-band from GaAs Schottky-barrier diodes was achieved as a result of improved heat sink and Schottky-barrier contact formation techniques. An output power of 2.1 watts (CW) at 9.2 GHz with an efficiency of 9 percent was obtained from a diode mounted on a diamond heat sink with the Schottky-barrier contact adjacent to it. The measured thermal resistance was about 7°C/W. The diodes were fabricated using platinum and molybdenum on n-type epitaxial GaAs substrate.
Keywords :
Copper; Electrical resistance measurement; Electromagnetic heating; Gallium arsenide; Heat sinks; Power generation; Pulse measurements; Schottky diodes; Semiconductor diodes; Voltage;
Journal_Title :
Proceedings of the IEEE
DOI :
10.1109/PROC.1970.7874
