• DocumentCode
    913355
  • Title

    Retention Characteristics of SNOS Nonvolatile Devices in a Radiation Environment

  • Author

    McWhorter, P.J. ; Miller, S.L. ; Dellin, T.A. ; Axness, C.A.

  • Author_Institution
    Sandia National Laboratories P. O. Box 5800 Albuquerque, New Mexico 87185
  • Volume
    34
  • Issue
    6
  • fYear
    1987
  • Firstpage
    1652
  • Lastpage
    1657
  • Abstract
    A quantitative model is developed that can accurately predict the threshold voltage shift, and hence data loss, in SNOS nonvolatile memory transistors over a wide range of dose rates. The model accounts for both the time dependent and radiation induced mechanisms leading to data loss. Experimental measurements are made to verify the validity and accuracy of the model under a variety of irradiation conditions.
  • Keywords
    Charge measurement; Current measurement; EPROM; Electrons; MOSFETs; Nonvolatile memory; Predictive models; Radiation hardening; Testing; Threshold voltage;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.1987.4337531
  • Filename
    4337531
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=913355