Title :
Ionizing Radiation Hardness of GaAs Technologies
Author :
Listvan, M. A. ; Vold, P. J. ; Arch, D. K.
Author_Institution :
Honeywell Physical Sciences Center 10701 Lyndale Ave S., Bloomington, MN 55420
Abstract :
The radiation response of several GaAs technologies to ionizing radiation has been investigated. Self-aligned gate (SAG) E/D GaAs Metal Semiconductor FET (MESFET), SAG AlGaAs/GaAs Modulation Doped FET (MODFET), and complementary-AlGaAs/GaAs Heterostructure Insulated Gate FET (C-HIGFET) devices and circuits all demonstrated minimal sensitivity to total dose effects to 250 Mrad(GaAs). The heterostructure based technologies showed superior tolerance to high dose rate exposures, with upset levels exceeding 1×1010 rads(GaAs)/s.
Keywords :
FETs; Gallium arsenide; Implants; Ionizing radiation; MESFET circuits; MODFET circuits; Ohmic contacts; Resistors; Single event upset; Space technology;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.1987.4337533
