Title :
Transient Radiation Effects in AlGaAs/GaAs MODFETs
Author :
Anderson, W.T. ; Simons, M. ; Tseng, W.F. ; Herb, J.A. ; Bandy, S.
Abstract :
Transient radiation effects were measured in AlGaAs/GaAs MODFETs. The temperature dependence of the long-term transients was measured using 3 ns flash X-ray pulses allowing the observation of trapping levels. These long-term transients were similar to those observed in conventional GaAs FETs, with the exception that persistent photoconductivity was observed in some devices.
Keywords :
Electrons; FETs; Gallium arsenide; HEMTs; MODFET circuits; MODFET integrated circuits; Photoconductivity; Pulse measurements; Radiation effects; Temperature dependence;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.1987.4337534
