• DocumentCode
    913384
  • Title

    Transient Radiation Effects in AlGaAs/GaAs MODFETs

  • Author

    Anderson, W.T. ; Simons, M. ; Tseng, W.F. ; Herb, J.A. ; Bandy, S.

  • Volume
    34
  • Issue
    6
  • fYear
    1987
  • Firstpage
    1669
  • Lastpage
    1675
  • Abstract
    Transient radiation effects were measured in AlGaAs/GaAs MODFETs. The temperature dependence of the long-term transients was measured using 3 ns flash X-ray pulses allowing the observation of trapping levels. These long-term transients were similar to those observed in conventional GaAs FETs, with the exception that persistent photoconductivity was observed in some devices.
  • Keywords
    Electrons; FETs; Gallium arsenide; HEMTs; MODFET circuits; MODFET integrated circuits; Photoconductivity; Pulse measurements; Radiation effects; Temperature dependence;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.1987.4337534
  • Filename
    4337534
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=913384