Title :
Three-Dimensional Device Simulator CADDETH with Highly Convergent Matrix Solution Algorithms
Author :
Toyabe, Toru ; Masuda, Hiroo ; Aoki, Yukio ; Shukuri, Hiroko ; Hagiwara, Takkki
Author_Institution :
Central Research Laboratory, Hitachi Ltd., Tokyo, Japan
fDate :
10/1/1985 12:00:00 AM
Abstract :
A practical three-dimensional device simulator CADDETH (Computer Aided Device DEsign in THree dimensions) has been developed. Matrix solution methods appropriate to three-dimensional analyses have been devised. A vectorization ratio of 97 percent has been attained through efficient use of S-810 super computer with vectorized coding, resulting in a computation speed 16 times greater than can be obtained with S-810 in scalar mode computation. Full avalanche breakdown of MOSFET´s can be readily simulated with good convergence and good agreement with experimental results.
Keywords :
Algorithm design and analysis; Computational modeling; Computer simulation; Fabrication; Impurities; Poisson equations; Spontaneous emission; Symmetric matrices; Vector processors; Very large scale integration;
Journal_Title :
Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on
DOI :
10.1109/TCAD.1985.1270146
