DocumentCode :
913452
Title :
A Model of Lattice Defects in Sapphire
Author :
Pogatshnik, G.J. ; Chen, Y. ; Evans, B.D.
Author_Institution :
Oak Ridge National Laboratory Solid State Division Oak Ridge, TN 37831
Volume :
34
Issue :
6
fYear :
1987
Firstpage :
1709
Lastpage :
1712
Abstract :
A model is proposed to account for the changes under ultraviolet illumination of several of the prominent optical absorption bands in neutron irradiated crystalline sapphire. This model, based on both new and previously observed photobleaching and predicted optical anisotropic properties of single and paired anion vacancies, assigns absorption and luminescent bands to specific charge states of anion divacancies.
Keywords :
Absorption; Anisotropic magnetoresistance; Atom optics; Electrons; Geometrical optics; Lattices; Neutrons; Optical filters; Optical pumping; Photobleaching;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/TNS.1987.4337541
Filename :
4337541
Link To Document :
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