Comments, on ´Millimeter- and submillimeter-wave multipliers using quantum-barrier-varactor (QBV) diodes´ (and reply)

Author

Krishnamurthi, Karthik ; Harrison, R.G. ; Rydberg, A. ; Gronqvist, H.

Author_Institution

Dept. of Electron., Carleton Univ., Ottawa, Ont., Canada

Volume

13

Issue

2

fYear

1992

Firstpage

132

Lastpage

133

Abstract

For the original article see ibid., vol.11, no.9, p.373-5 (1990). The commenters give reasons for the discrepancy between measured and calculated currents for quantum barrier varactors proposed in the above-titled paper, based on the well-known intervalley transfer phenomenon in direct Al/sub x/Ga/sub 1-x/As barriers. Suggestions for improving the Q of the varactors are also included. In their reply, the authors acknowledge the importance of the lowering of the barrier height and briefly discuss some subsequent work.<>

Keywords

Q-factor; frequency multipliers; solid-state microwave devices; submillimetre wave devices; varactors; Al/sub x/Ga/sub 1-x/As barriers; MM-wave multipliers; Q-factor improvement; QBV diodes; barrier height reduction; intervalley transfer phenomenon; quantum-barrier-varactor; submillimeter-wave multipliers; Current measurement; Frequency; Gallium arsenide; Heterojunctions; Indium phosphide; Photonic band gap; Semiconductor diodes; Substrates; Tunneling; Varactors;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.144982

Filename

144982