Testing Considerations for Radiation Induced Latchup

Changes in device technology have introduced new mechanisms and interactions that affect radiation-induced latchup in both linear and digital integrated circuits. Multiple latchup paths, distributed current flow, the influence of holding voltage and the presence of localized regions with small holding currents force a reexamination of testing and analysis methods. This paper discusses the impact of these factors on latchup testing, detection and screening. Specific recommendations are made for latchup testing using both conventional sources and infrared lasers.