DocumentCode
913507
Title
First Nondestructive Measurements of Power MOSFET Single Event Burnout Cross Sections
Author
Oberg, Dennis L. ; Wert, Jerry L.
Author_Institution
Boeing Aerospace Company Seattle, WA 98124-2499
Volume
34
Issue
6
fYear
1987
Firstpage
1736
Lastpage
1741
Abstract
A new technique to nondestructively measure single event burnout cross sections for N-channel power MOSFETs is presented. Previous measurements of power MOSFET burnout susceptibility have been destructive and thus not conducive to providing statistically meaningful burnout probabilities. The nondestructive technique and data for various device types taken at several accelerators, including the LBL Bevalac, are documented. Several new phenomena are observed.
Keywords
Circuit testing; Current limiters; Laboratories; MOSFET circuits; Parasitic capacitance; Power MOSFET; Power measurement; Pulse circuits; Resistors; Voltage;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/TNS.1987.4337546
Filename
4337546
Link To Document