Flicker Noise Behavior in Resistive Memory Devices With Double-Layered Transition Metal Oxide

Author

Jung-Kyu Lee ; Sunghun Jung ; Byeong-In Choe ; Jinwon Park ; Sung-Woong Chung ; Jae Sung Roh ; Sung-Joo Hong ; Chan Hyeong Park ; Byung-Gook Park ; Jong-Ho Lee

Author_Institution

Interuniv. Semicond. Res. Center, Seoul Nat. Univ., Seoul, South Korea

Volume

34

Issue

2

fYear

2013

fDate

Feb. 2013

Firstpage

244

Lastpage

246

Abstract

Characteristics of flicker (or 1/f) noise have been investigated in resistive-switching random access memory (RRAM) devices with TiN/Ti/TiO_x/HfO_x/TiN double-layered (DL) metal oxide structure. In DL-RRAMs, no significant difference is found in the normalized current noise power spectral densities of the high- and low-resistance states, unlike RRAMs with the TiN/Ti/TiO_x/ TiN SL structure. Based on comparative analysis, we demonstrate that the dominant 1/f noise source of DL-RRAM is located near the TiO_x/HfO_x and HfO_x/TiN interfaces, and the origin of 1/f noise is modeled to be the mobility fluctuation. A unique measurement method, which completely breaks down the HfO_x layer only, was employed for a systematic analysis of RRAMs with three different structures.

Keywords

1/f noise; flicker noise; random-access storage; titanium; titanium compounds; 1/f noise source; DL metal oxide structure; DL-RRAMs device; TiN-Ti-TiO_xHfO_x-TiN; double-layered transition metal oxide; flicker noise behavior; measurement method; mobility fluctuation; normalized current noise power spectral densities; resistive-switching random access memory devices; Hafnium compounds; Noise; Noise measurement; Schottky barriers; Silicon; Switches; Tin; Low-frequency noise (LFN); Schottky barrier; resistive-switching (RS) random access memory (RRAM);

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2012.2235401

Filename

6410338