DocumentCode
913621
Title
SEU Sensitivity of Power Converters with MOSFETs in Space
Author
Brucker, G.J. ; Measel, P. ; Oberg, D. ; Wert, J. ; Criswell, T.
Author_Institution
RCA/GE Astro-Space Division P.O. Box 800 Princeton, N.J. 08543-0800
Volume
34
Issue
6
fYear
1987
Firstpage
1792
Lastpage
1795
Abstract
This paper presents the results of an investigation into the survivability of power MOSFETs in space. Seventy-two of these devices are presently in geosynchronous orbit on board six communications spacecraft, and operating at 70V which is 70% of the nominal breakdown voltage. No failures have occurred after 94536 device-days in space. The irradiation of discrete parts as well as the prototype flight power converter, containing the same part types, by iron particles with a LET of 10 MeV-cm2/mg, and an iron spectrum with a maximum LET of 26 showed these Hi-Rel ("S") flight parts to be relatively harder than the same type of devices previously ground tested. This appears to be the explanation for the lack of failures in space.
Keywords
Aerospace electronics; Assembly; Breakdown voltage; Circuits; Iron; MOSFETs; Power supplies; Prototypes; Space vehicles; Testing;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/TNS.1987.4337556
Filename
4337556
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