DocumentCode
913643
Title
Two-dimensional analysis of lateral-base transistors
Author
Kilpatrick, J.A. ; Ryan, W.D.
Author_Institution
Queen´s University of Belfast, Department of Electrical & Electronic Engineering, Belfast, UK
Volume
7
Issue
9
fYear
1971
Firstpage
226
Lastpage
227
Abstract
Numerical methods are used to show that when p-n-p lateral-base transistors are analysed, the emitter efficiency must be considered. A comparison is made between two such transistors, one with a buried n layer, and the other without.
Keywords
bipolar transistors; bipolar transistors; lateral base transistors; p-n-p; two dimensional analysis;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19710153
Filename
4235236
Link To Document